Process for making a double wafer moated signal processor

摘要: The method of forming a multiwafer integrated circuit for abutting electrical connection to external electronics is disclosed. comprises plurality grooves in the first surface each and second wafers. are filled with body insulating material joined along groove surfaces thereof. In one embodiment active circuitry formed wafer surfaces. another non-abutting Conductive leads applied wafers be communication doped regions. At least conductive extends across at portion grooves. trimmed length so that lengthwise edges defined by butt end exposed. A layer deposited edge exposed lead facilitate between regions electronics.