作者: Kazufumi Suenaga , Keiichi Yoshizumi , Kiyoshi Ogata , Hisahiko Abe , Jun Tanaka
DOI:
关键词: Crystal 、 Semiconductor memory 、 Yield (engineering) 、 Optoelectronics 、 Capacitor 、 Ferroelectric thin films 、 Relative standard deviation 、 Polarization (electrochemistry) 、 Materials science
摘要: The present invention is a high quality semiconductor memory device using ferroelectric thin film capacitor as at manufacturing yield, the of specified such that relative standard deviation crystal grain sizes 13% or less, to thereby ensure remanent polarization value and small fatigue (large rewritable number).