Thin-film capacitor element and semiconductor device
作者： Kazuaki Kurihara , Takeshi Shioga , John David Bariecki
DOI:
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摘要: A thin-film capacitor element has at least a lower electrode, ferroelectric layer, and an upper electrode. The electrode adds compressive stress of 10 MPa to 5 GPa the layer. includes one oxide selected from PtO x , IrO RuO SrRuO y LaNiO .
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