Integrated circuit structure including a copper-aluminum interconnect and method for fabricating the same
作者： Kuo Hui Su , Yi Nan Chen , Hsien Wen Liu
DOI:
关键词: Integrated circuit 、 Tantalum 、 Optoelectronics 、 Materials science 、 Nitride 、 Layer (electronics) 、 Copper 、 Aluminium 、 Electronic engineering 、 Barrier layer 、 Tantalum nitride
摘要: An integrated circuit structure including a copper-aluminum interconnect with barrier layer titanium nitride and method for fabricating the same are disclosed. The an according to present invention comprises steps of providing copper (Cu) layer; forming connected layer, wherein first tantalum second contacts is disposed between has recess correspondingly above aluminum (Al) in recess.
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