Efficient interconnect structure for electrical fuse applications
作者： Lynne M. Gignac , Chao-Kun Hu , Chih-Chao Yang
DOI:
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摘要: A semiconductor structure is provided that includes an interconnect and a fuse located in different areas, yet within the same level. The has high electromigration resistance, while lower resistance as compared with structure. conductive material embedded dielectric which upper surface of concentration oxygen present therein. capping layer atop material. presence oxide at interface between degrades adhesion layer. As such, when current to occurs over time opening formed blowing element.
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