Electrically-programmable transistor antifuses

摘要: Integrated circuit antifuse circuitry is provided. A metal-oxide-semiconductor (MOS) transistor serves as an electrically-programmable antifuse. The has source, drain, gate, and substrate terminals. gate associated oxide. In its unprogrammed state, the oxide intact a relatively high resistance. During programming, breaks down, so in programmed state low can be by injecting hot carriers into of device vicinity drain. Because there are more at drain than substrate, stressed asymmetrically, which enhances programming efficiency. Feedback used to assist turning on inject carriers.