Fabricating an electrical metal fuse
作者： Ta-Lee Yu
DOI:
关键词: Copper 、 Current density 、 Semiconductor 、 Integrated circuit 、 Electronic engineering 、 Substrate (electronics) 、 Materials science 、 Optoelectronics 、 Fuse (automotive) 、 Metal 、 Trench
摘要: A method for forming an electrical metal fuse use with a semiconductor integrated circuit device. At least two varying trench depths may be formed on substrate to configure the thereon. Additionally, at different widths of single lines, configured substrate. As result and thereon create fuse, increases in current density gradients thermal thereof can generated. The width are from copper. generally comprises ratio greater than 10 1.
lens.org 参考文章(1)
Patricia E. Marmillion, Dennis A. Schmidt, Anthony M. Palagonia, Micro fusible link for semiconductor devices and method of manufacture ,(1998)