Electrically-programmable integrated circuit antifuses

摘要: Integrated circuit antifuse circuitry is provided. A metal-oxide-semiconductor (MOS) transistor serves as an electrically-programmable antifuse. In its unprogrammed state, the off and has a relatively high resistance. During programming, turned on which melts underlying silicon causes permanent reduction in transistor's sensing monitors resistance of supplies or low output signal accordingly. The may be during programming by raising voltage at substrate relative to source. connected ground through resistor. biased causing current flow Current made resistor inducing avalanche breakdown drain-substrate junction producing Zener external diode