Hydrogen-oxygen interaction in silicon at around 50 °C

摘要: Formation kinetics of oxygen–hydrogen (O–H) complexes which give rise to an infrared absorption line at 1075.1 cm−1 have been studied in Czochralski-grown silicon crystals the temperature range 30–150 °C. Hydrogen was incorporated into by high (1200 °C) diffusion from H2 gas. It found that observed can be explained as being due interaction mobile neutral hydrogen-related species with bond-centered oxygen atoms. The binding energy O–H complex determined 0.28±0.02 eV. An activation for migration responsible formation 0.78±0.05 shown atomic hydrogen and H2*, a containing two atoms, one site another antibonding site, cannot account hydrogen–oxygen considered. molecules (H2) located tetrahedral interstitial are suggested interact i...