作者: V. V. Melnikov
DOI: 10.1134/S1063776115060199
关键词:
摘要: The structural and energy characteristics of interstitial molecular hydrogen in single-crystal silicon are theoretically studied. dependence the potential system on position orientation defect is investigated, mechanism interaction a molecule with crystal considered. A three-dimensional model employed to calculate spectrum H2 Si, obtained dispersion law analyzed.