Ortho and para interstitial H2 in silicon.

作者: E. V. Lavrov , J. Weber

DOI: 10.1103/PHYSREVLETT.89.215501

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摘要: A Raman scattering study of ${\mathrm{H}}_{2}$ trapped at the interstitial $T$ site in Si is presented. Both ortho and para nuclear-spin states ${\mathrm{D}}_{2}$ have been observed. It shown that signals $J=0$ state, where $J$ rotational quantum number, disappear preferentially from spectra during laser excitation or prolonged storage room temperature dark. This surprising behavior tentatively explained by different diffusion rates $J=1$ states.

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