Temperature dependence of the first-order Raman scattering by phonons in Si, Ge, and α − S n : Anharmonic effects

作者: José Menéndez , Manuel Cardona

DOI: 10.1103/PHYSREVB.29.2051

关键词:

摘要: … We show that the model assuming the decay of the Raman phonon … the temperature dependence of the Raman linewidth. … % in Si and Ge and 30% for a-Sn at low temperatures …

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