Endurance and scaling trends of novel access-devices for multi-layer crosspoint-memory based on mixed-ionic-electronic-conduction (MIEC) materials

作者： A. J. Kellock , T. Topuria , M. Breitwisch , G. W. Burr , B. N. Kurdi

DOI:

关键词: Very-large-scale integration 、 Resistive random-access memory 、 Current density 、 Leakage (electronics) 、 Phase-change memory 、 Scaling 、 Materials science 、 Optoelectronics 、 Magnetoresistive random-access memory 、 Voltage 、 Electrical engineering

摘要: We demonstrate compact integrated arrays of BEOL-friendly novel access devices (AD) based on Cu-containing MIEC materials [1–3]. In addition to the high current densities and large ON/OFF ratios needed for Phase Change Memory (PCM), scaled-down ADs also exhibit larger voltage margin V m , ultra-low leakage (<10pA), much higher endurance (>108) at densities. Using CMP, all-good 5×10 AD with > 1.1V are demonstrated in a simplified CMOS-compatible diode-in-via (DIV) process.