Method of fabricating barrier adhesion to low-k dielectric layers in a copper damascene process

摘要: A method for forming an improved TaN copper barrier a damascene process is described which has adhesion to low-k dielectric layers and also improves the wetting of seed layer deposited over it thereby improving structure critical achieving uniform, high quality electrochemical deposition. The composite having lower thin Ta rich portion mixes into reacts with surface layer, strongly bonded transition between material remaining layer. presence causes compressive film stress rather than tensile as found in conventional barrier. As result, does not delaminate from during subsequent processing. second thick central formed stoichiometric benefits CMP structure. An upper three sections laminar are sequentially single pumpdown operation by IMP sputtering target.