Copper electroless deposition technology for ULSI metalization

摘要: A process and structure for copper damascene interconnects including a tungsten-nitride (WN2) barrier layer formed by atomic deposition is disclosed. The method includes of forming first opening through insulating layer. second which provided over the being in communication with opening. contact openings. And, Copper selectively deposited using selective electroless technique at low temperature to provide improved having lower electrical resistivity more electro/stress-migration resistance than conventional interconnects. Additionally, metal adhesion underlying substrate materials amount associated waste disposal problems reduced.