Method of making polysilicon/tungsten silicide multilayer composite on an integrated circuit structure

摘要: Described is an improved polysilicon/tungsten silicide (WSi x ) composite layer formed over integrated circuit structure on a semiconductor wafer and characterized by step coverage non tungsten-rich tungsten:silicon ratio of the WSi layer, method forming same. A doped polysilicon in first deposition chamber previously substrate capping undoped then deposited layer. The transferred from into second without exposing surface to oxidizing media. desired tungsten onto using gaseous source such as WF6, dichlorosilane (DCS) silicon, formation undesirable characteristic prior art. may be doped, after subsequently heating sufficiently cause dopant migrate thereon. Such carried out separate annealing step, but preferably situ part subsequent processing being substrate.