3-D Vertical Dual-Layer Oxide Memristive Devices
作者：
关键词: Oxide 、 Electrical engineering 、 Memristor 、 Lithography 、 Materials science 、 Resistive random-access memory 、 Planar 、 Electrode 、 Neuromorphic engineering 、 Optoelectronics 、 Tungsten
摘要: Dual-layer resistive switching memory devices with WO x layer formed at the sidewall of horizontal electrodes have been fabricated and characterized. The exhibit well-characterized analog characteristics small mismatch in electrical for two layers. 3-D vertical device structure allows higher storage density larger connectivity neuromorphic computing applications. We show that potentiation depression similar to planar devices, can be programmed independently no crosstalk between
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