Conductive Atomic Force Microscope Study of Bipolar and Threshold Resistive Switching in 2D Hexagonal Boron Nitride Films.
作者： A. Ranjan , N. Raghavan , S. J. O’Shea , S. Mei , M. Bosman
DOI: 10.1038/S41598-018-21138-X
关键词: Resistive switching 、 Noise (electronics) 、 Resistive random-access memory 、 Oxide 、 Optoelectronics 、 Electrical conductor 、 Dielectric 、 Power (physics) 、 Materials science 、 Conductive atomic force microscopy
摘要: This study investigates the resistive switching characteristics and underlying mechanism in 2D layered hexagonal boron nitride (h-BN) dielectric films using conductive atomic force microscopy. A combination of bipolar threshold is observed consistently on multi-layer h-BN/Cu stacks low power regime with current compliance (I comp ) less than 100 nA. Standard random telegraph noise signatures were resistance state (LRS), similar to trends oxygen vacancy-based RRAM devices. While h-BN appears be a good candidate terms performance endurance, it performs poorly retention lifetime due self-recovery LRS (similar recovery soft breakdown oxide-based dielectrics) that at all locations without requiring any change voltage polarity for I ~1-100 nA.
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B. J. Choi, D. S. Jeong, S. K. Kim, C. Rohde, S. Choi, J. H. Oh, H. J. Kim, C. S. Hwang, K. Szot, R. Waser, B. Reichenberg, S. Tiedke, Resistive switching mechanism of TiO2 thin films grown by atomic-layer deposition Journal of Applied Physics. ,vol. 98, pp. 033715- ,(2005) , 10.1063/1.2001146
Li Song, Lijie Ci, Hao Lu, Pavel B. Sorokin, Chuanhong Jin, Jie Ni, Alexander G. Kvashnin, Dmitry G. Kvashnin, Jun Lou, Boris I. Yakobson, Pulickel M. Ajayan, Large Scale Growth and Characterization of Atomic Hexagonal Boron Nitride Layers Nano Letters. ,vol. 10, pp. 3209- 3215 ,(2010) , 10.1021/NL1022139
Keith McKenna, Alexander Shluger, The interaction of oxygen vacancies with grain boundaries in monoclinic HfO2 Applied Physics Letters. ,vol. 95, pp. 222111- ,(2009) , 10.1063/1.3271184
X. Li, W. H. Liu, N. Raghavan, M. Bosman, K. L. Pey, Resistive switching in NiSi gate metal-oxide-semiconductor transistors Applied Physics Letters. ,vol. 97, pp. 202904- ,(2010) , 10.1063/1.3516466
Yuanmin Du, Amit Kumar, Hui Pan, Kaiyang Zeng, Shijie Wang, Ping Yang, Andrew Thye Shen Wee, The resistive switching in TiO2 films studied by conductive atomic force microscopy and Kelvin probe force microscopy AIP Advances. ,vol. 3, pp. 082107- 082107 ,(2013) , 10.1063/1.4818119
J. Joshua Yang, Matthew D. Pickett, Xuema Li, Douglas A. A. Ohlberg, Duncan R. Stewart, R. Stanley Williams, Memristive switching mechanism for metal/oxide/metal nanodevices. Nature Nanotechnology. ,vol. 3, pp. 429- 433 ,(2008) , 10.1038/NNANO.2008.160
Roman V. Gorbachev, Kostya S. Novoselov, Alexander S. Mayorov, Laurence Eaves, Liam Britnell, Jon Leist, Andre K. Geim, Leonid A. Ponomarenko, Antonio H. Castro Neto, Rashid Jalil, Branson D. Belle, Mikhail I. Katsnelson, Sergey V. Morozov, Nuno M. R. Peres, Fred Schedin, Electron Tunneling through Ultrathin Boron Nitride Crystalline Barriers Nano Letters. ,vol. 12, pp. 1707- 1710 ,(2012) , 10.1021/NL3002205
Ernest Y. Wu, Baozhen Li, James H. Stathis, Modeling of time-dependent non-uniform dielectric breakdown using a clustering statistical approach Applied Physics Letters. ,vol. 103, pp. 152907- ,(2013) , 10.1063/1.4824035
N. Raghavan, R. Degraeve, A. Fantini, L. Goux, S. Strangio, B. Govoreanu, D. J. Wouters, G. Groeseneken, M. Jurczak, Microscopic origin of random telegraph noise fluctuations in aggressively scaled RRAM and its impact on read disturb variability international reliability physics symposium. ,(2013) , 10.1109/IRPS.2013.6532042
D. S. Shang, Q. Wang, L. D. Chen, R. Dong, X. M. Li, W. Q. Zhang, Effect of carrier trapping on the hysteretic current-voltage characteristics in Ag ∕ La 0.7 Ca 0.3 MnO 3 ∕ Pt heterostructures Physical Review B. ,vol. 73, pp. 245427- ,(2006) , 10.1103/PHYSREVB.73.245427