Positional Disorder-Induced Mobility Enhancement in Rapidly Cooled Organic Semiconductor Melts

摘要: The study of the charge carrier transport mechanism in organic semiconducting films is a great challenge because weak interaction between molecules. Generally, high crystallinity regarded as being conducive to films. However, have been found exhibit less but improved mobility after heated melt and then rapidly cooled. In this paper, hole mobilities as-vacuum deposited cooled two semiconductors, 4,4′,4′′-tris(N-3-methylphenyl-N-phenyl-amino)triphenylamine (mTDATA) N,N′-diphenyl-N,N′-bis(3-methyl)-benzidine (TPD), were measured by time-of-flight (TOF) method at different temperatures, ranging from 260 320 K. Gaussian disorder model (GDM) has employed investigate properties films, energetic positional parameters calculated quantitatively. It that higher disorde...