Field dependence of hole mobility in TPD-doped polystyrene

摘要: Abstract Field and temperature dependence of hole mobility in N , ′ -diphenyl- -bis(3-methylphenyl)-(1,1′-biphenyl)-4,4′-diamine (TPD) doped polystyrene (PS) is studied using the transient photoconductivity technique. We observe both positive negative field with increasing temperature. The at which begins low compared earlier reports on similar systems (with 20 wt% dopant concentration). Results are discussed basis Gaussian disorder model (GDM), predicts that interplay energetic positional molecules sample decides slope log μ versus E 1 / 2 plot. observed rationalized sample. reason for purely due to film morphology Even a concentration 20 wt%, we clustering chaining TPD molecules, may provide disorder.