作者: S. Raj Mohan , M.P. Joshi , Manoranjan P. Singh
DOI: 10.1016/J.CPLETT.2009.01.066
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摘要: Abstract A total negative field dependence of hole mobility down to low temperature was observed in N , ′-diphenyl- ′-bis(3-methylphenyl)-(1,1′-biphenyl)-4,4′-diamine (TPD) doped Polystyrene. The is explained on the basis values energetic and positional disorder present sample. value attributed different morphology sample due aggregation TPD. Monte Carlo simulations were also performed understand influence aggregates charge transport disordered medium with correlated site energies. simulation supports our experimental observations justification parameters.