Far-infrared spectroscopy of the zinc acceptor in indium phosphide

作者: R.L Causley , R.A Lewis

DOI: 10.1016/S0921-4526(01)00448-3

关键词: Nuclear magnetic resonanceAbsorption spectroscopyAnalytical chemistrySpectral lineExcited stateFar infraredMaterials scienceZeeman effectElectric fieldInfrared spectroscopyAcceptor

摘要: We report the absorption spectrum of Zn acceptor in InP. Fourier interferometers equipped with Si bolometers were used to collect spectra at sample temperatures down 1.9 K. Zeeman measurements made Voigt configuration fields up 6.5 T electric field radiation, E, polarised either parallel or perpendicular magnetic field, Bjjh001i. Energies for G and D lines, corresponding transitions from 1s3=2 ðG þ Þ 2p3=2 � 2p5=2 states, respectively, are 241.5 0.2 286.0 cm 1 , respectively. Data taken higher resolution (0.05 ) indicate an intrinsic line width 0.5 full-width half-maximum a carrier concentration 4 10 16 3 . At low (B53 T), rapidly broadens, losing intensity becoming unresolvable. highest fields, four components EjjB two E?B resolved line. Comparing data 1.9, 2.9, 5.4 10.4 K reveals thermal depopulation effects. These experimental permit determination g-factors ground first excited state # 2001 Elsevier Science B.V. All rights reserved.

参考文章(22)
Mahmoud Omar Manasreh, InP and related compounds : materials, applications and devices Gordon and Breach Science. ,(2000) , 10.1201/9781482282986
D.L. Lile, The history and future of InP based electronics and optoelectronics international conference on indium phosphide and related materials. pp. 6- 9 ,(1998) , 10.1109/ICIPRM.1998.712387
A.A. Reeder, J.M. Chamberlain, R.J. Turner, G. Hill, Shallow-donor profiles and zero magnetic field FIR photoconductivity spectra of high purity indium phosphide Solid State Communications. ,vol. 57, pp. 355- 359 ,(1986) , 10.1016/0038-1098(86)90107-9
M. Wenzel, G. Irmer, J. Monecke, Electronic Raman spectra of shallow acceptors in p-type InP Solid State Communications. ,vol. 104, pp. 371- 374 ,(1997) , 10.1016/S0038-1098(97)00334-7
R Atzmuller, M Dahl, J Kraus, G Schaack, J Schubert, Far-infrared Zeeman spectroscopy of shallow C- and Zn-acceptors in GaAs Journal of Physics: Condensed Matter. ,vol. 3, pp. 6775- 6788 ,(1991) , 10.1088/0953-8984/3/35/009
R A Stradling, C J Armistead, P Knowles, S P Najda, Far-infrared studies of central-cell structure of shallow donors in GaAs and InP Journal of Physics C: Solid State Physics. ,vol. 17, pp. 6415- 6434 ,(1984) , 10.1088/0022-3719/17/35/013
W. Zawadzki, P. Pfeffer, S. P. Najda, H. Yokoi, S. Takeyama, N. Miura, Experimental and theoretical study of magnetodonors in GaAs and InP at megagauss fields Physical Review B. ,vol. 49, pp. 1705- 1710 ,(1994) , 10.1103/PHYSREVB.49.1705
G. Irmer, M. Wenzel, J. Monecke, RAMAN SCATTERING AT SHALLOW ACCEPTORS IN INP Physica Status Solidi B-basic Solid State Physics. ,vol. 210, pp. 347- 351 ,(1998) , 10.1002/(SICI)1521-3951(199812)210:2<347::AID-PSSB347>3.0.CO;2-L
R.A. Lewis, M. Henini, Magneto‐Spectroscopy of Beryllium Impurity in Gallium Arsenide Physica Status Solidi B-basic Solid State Physics. ,vol. 210, pp. 821- 825 ,(1998) , 10.1002/(SICI)1521-3951(199812)210:2<821::AID-PSSB821>3.0.CO;2-X
W O G Schmitt, E Bangert, G Landwehr, Zeeman levels of shallow acceptors in cubic semiconductors Journal of Physics: Condensed Matter. ,vol. 3, pp. 6789- 6815 ,(1991) , 10.1088/0953-8984/3/35/010