作者: Zhuwen Zhou , Yiyan Yang , Bo Kong , Chen Lu
DOI: 10.1109/PIERS.2017.8262155
关键词: Chemical reaction 、 Plasma-enhanced chemical vapor deposition 、 Chemical engineering 、 Ionization 、 Materials science 、 Kinetic energy 、 Silane 、 Thin film 、 Chemical vapor deposition 、 Plasma
摘要: Through the particle in cell simulation (PIC), we successfully simulated silane (SiH 4 ) and nitrous oxide (N 2 O) plasma enhanced chemical vapor deposition (PECVD) process for preparing SiO thin film. The of experiment was analyzed, which were kinetic energy, sheath space energy distribution ions ionization. Analysis these physical parameters, a comparison SiH N O reaction experiments, results from perspectives can explain reasonably film, through theory interpret use (N2 forming mechanism generation SiO2