Noble metal barrier layers
作者： Adrien R. Lavoie , Aaron A. Budrevich , Juan E. Dominguez
DOI:
关键词: Noble metal 、 Rhodium 、 Barrier layer 、 Metal 、 Platinum 、 Chemical engineering 、 Ruthenium 、 Palladium 、 Inorganic chemistry 、 Materials science 、 Tungsten
摘要: Noble metal barrier layers are disclosed. In one aspect, an apparatus may include a substrate, dielectric layer over the and interconnect structure within layer. The have bulk be disposed between or more metals selected from iridium, platinum, palladium, rhodium, osmium, gold, silver, rhenium, ruthenium, tungsten, nickel.
lens.org 参考文章(32)
David Miess, Roger Vale, Drill insert using a sandwiched polycrystalline diamond compact and method of making the same ,(2000)
Harsono Simka, Adrien Lavoie, Steven Johnston, Kevin O'Brien, Juan Dominguez, Organometallic precursors for the chemical phase deposition of metal films in interconnect applications ,(2005)
Michael L. McSwiney, Peter Moon, Steven W. Johnston, Valery M. Dubin, Forming a copper diffusion barrier ,(2002)
Harsono S. Simka, John J. Plombon, Adrien R. Lavoie, Juan E. Dominguez, Joseph H. Han, Catalytically enhanced atomic layer deposition process ,(2006)
Michael L. McSwiney, Steven W. Johnston, Juan E. Dominguez, Nobel metal barrier and seed layer for semiconductors ,(2005)
Eun-Seok Choi, Method for forming metal films ,(2002)
Tatyana N. Andreyushchenko, Paul Fischer, Valery M. Dubin, Kenneth Cadien, Method to fabricate interconnect structures ,(2003)
Eugene P. Marsh, Low temperature deposition of barrier layers ,(1998)
Mikko Ritala, Markku Leskela, Jani Hamalainen, Atomic layer deposition of noble metal oxides ,(2005)
Seshadri Ganguli, Mei Chang, Nirmalya Maity, Ruthenium layer formation for copper film deposition ,(2004)