Critical effects of substrate terraces and steps morphology on the growth mode of epitaxial SrRuO3 films

作者: F. Sánchez , G. Herranz , I. C. Infante , J. Fontcuberta , M. V. García-Cuenca

DOI: 10.1063/1.1786361

关键词: Pulsed laser depositionNanotechnologySelf-assemblyNanostructureSubstrate (electronics)Layer by layerChemical physicsNucleationEpitaxyMaterials scienceFabrication

摘要: We report on the controlled fabrication of arrays self-organized fingerlike nanostructures SrRuO3 that form SrTiO3(001). show size (width and height) one-dimensional nanometric units can be tuned or suppressed by using appropriate substrate vicinality θv surface termination. Critical effects fingers height are observed when is below an angle as small ∼0.1°. The value also determines if final two-dimensional growth a step flow (θv=0.5°), layer (θv=0.04°), coexistence both mechanisms (θv=0.1°). TiO2-terminated low-miscut substrates used, film nucleation takes place terraces then steps not active templates for structure formation. These findings shall contribute to progress toward lateral nanostructuration complex oxide surfaces.

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