Characterization of thin metal films processed at different temperatures

作者: J. E. Siewenie , L. He

DOI: 10.1116/1.581893

关键词: NickelCrystallographySubstrate (electronics)Materials scienceGrain sizeTransmission electron microscopyElectron diffractionAluminiumElectrical resistivity and conductivityThin filmAnalytical chemistry

摘要: Thin metal of Au, Ag, and Al films were deposited onto room temperature (RT) low (LT=77 K) substrates then subjected to five types measurement: resistivity vs film thickness, substrate temperature, atomic force microscopy (AFM), transmission electron (TEM), TEM diffraction. In all three cases, the LT continuous at lower thicknesses than RT during thickness measurements. During testing very thin (<100 A), exhibited resistivities that orders magnitude same thickness. general, AFM scans better coverage thicknesses, showed larger grain size. Resistivity measurements done on Pd Ni. measured thicknesses. Ni started with higher resistivit...

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