Improved Organic Light Emitting Diodes Using Cryogenic LiF/Al Deposition

作者: Byung-hwan Chu , Byung Doo Chin , Kwang Hyeon Baik , Stephen J. Pearton , Fan Ren

DOI: 10.1143/JJAP.51.09MH04

关键词:

摘要: The effect of cryogenic temperature deposition Al and LiF contacts on the electrical optical performance organic light emitting diodes (OLEDs) was investigated. reverse current OLED with 77 K deposited reduced by one order magnitude, output intensity dramatically improved compared to device conventional e-beam evaporated cathodes, due damage metal film interface. Atomic force microscope (AFM) imaging showed uniformly distributed smaller grains, X-ray diffraction (XRD) pattern indicated better crystallinity for film. Also, an abrupt interface between contact polymer observed from secondary ion mass spectroscopy (SIMS) depth profiling.

参考文章(19)
Han-Ki Kim, D.-G. Kim, K.-S. Lee, M.-S. Huh, S. H. Jeong, K. I. Kim, H. Kim, D. W. Han, J. H. Kwon, Plasma damage-free deposition of Al cathode on organic light-emitting devices by using mirror shape target sputtering Applied Physics Letters. ,vol. 85, pp. 4295- 4297 ,(2004) , 10.1063/1.1815394
S.A. Clark, S.P. Wilks, A. Kestle, D.I. Westwood, M. Elliott, Improvements to the Schottky barrier heights of intimate metal-InGaAs contacts by low temperature metallisation Surface Science. pp. 850- 854 ,(1996) , 10.1016/0039-6028(95)01286-9
Z. Q. Shi, W. A. Anderson, Electrical and optical characterization of metal/n‐InP interfaces formed by a cryogenic process in high vacuum Journal of Vacuum Science and Technology. ,vol. 11, pp. 985- 989 ,(1993) , 10.1116/1.578580
Hung-Ta Wang, S. Jang, T. Anderson, J. J. Chen, B. S. Kang, F. Ren, L. F. Voss, L. Stafford, R. Khanna, B. P. Gila, S. J. Pearton, H. Shen, Jeffrey R. LaRoche, Kurt V. Smith, Increased Schottky barrier heights for Au on n- and p-type GaN using cryogenic metal deposition Applied Physics Letters. ,vol. 89, pp. 122106- ,(2006) , 10.1063/1.2356698
D.S. Cammack, S.M. McGregor, J.J. McChesney, S.A. Clark, P.R. Dunstan, S.R. Burgess, S.P. Wilks, F. Peiró, J.-C. Ferrer, A. Cornet, J.R. Morante, A. Kestle, D.I. Westwood, M. Elliott, An investigation of the properties of intimate InInxGa1-xAs(100) interfaces formed at room and cryogenic temperatures Applied Surface Science. ,vol. 123, pp. 501- 507 ,(1998) , 10.1016/S0169-4332(97)00529-1
N. C. Greenham, S. C. Moratti, D. D. C. Bradley, R. H. Friend, A. B. Holmes, Efficient light-emitting diodes based on polymers with high electron affinities Nature. ,vol. 365, pp. 628- 630 ,(1993) , 10.1038/365628A0
H. J. Lee, W. A. Anderson, H. Hardtdegen, H. Lüth, Barrier height enhancement of Schottky diodes on n‐In0.53Ga0.47As by cryogenic processing Applied Physics Letters. ,vol. 63, pp. 1939- 1941 ,(1993) , 10.1063/1.110607
Byung Doo Chin, Lian Duan, Moo-Hyun Kim, Seong Taek Lee, Ho Kyoon Chung, Effects of cathode thickness and thermal treatment on the design of balanced blue light-emitting polymer device Applied Physics Letters. ,vol. 85, pp. 4496- 4498 ,(2004) , 10.1063/1.1815378
K. Tominaga, M. Chong, Y. Shintani, Energetic particles in the sputtering of an indium–tin oxide target Journal of Vacuum Science and Technology. ,vol. 12, pp. 1435- 1438 ,(1994) , 10.1116/1.579333
J. E. Siewenie, L. He, Characterization of thin metal films processed at different temperatures Journal of Vacuum Science and Technology. ,vol. 17, pp. 1799- 1804 ,(1999) , 10.1116/1.581893