作者: Liu Lu , Xiaohong Xia , J K Luo , G Shao
DOI: 10.1088/0022-3727/45/48/485102
关键词: Doping 、 Electron mobility 、 Crystallography 、 Rutile 、 Conductivity 、 Sputter deposition 、 Thin film 、 Materials science 、 Anatase 、 Electrical resistivity and conductivity
摘要: TiO2 thin films with various Mn doping contents were fabricated by reactive magnetron sputtering deposition at 550??C and their structural, optical electrical properties characterized. All made of densely packed columnar grains a fibrous texture along the normal direction substrate. The as-deposited structure in pure film consisted anatase [1?0?1] texture. incorporation stabilized rutile phase induced lattice contraction [1?0?0] direction. Mn-doped changed from [1?1?0] to [2?0?0] increasing content. introduced intermediate bands into its narrowed forbidden gap, leading remarkable red-shifts absorption edges, together significantly improved conductivity films. Hall measurement showed that Mn-induced p-type conductivity, hole mobility heavily doped (?40% Mn) being about an order higher than electron single-crystal TiO2. Oxygen vacancies, on other hand, interacted substitutional atoms reduce effect properties.