Thermopower of doped and damaged NbSe3
作者： P.M. Chaikin , W.W. Fuller , R. Lacoe , J.F. Kwak , R.L. Greene
DOI: 10.1016/0038-1098(81)90321-5
关键词: Lower temperature 、 Condensed matter physics 、 Radiation 、 Charged impurity 、 Radiation damage 、 Materials science 、 Doping 、 Seebeck coefficient 、 Charge density wave
摘要: Abstract We have measured the thermoelectric power of pure NbSe3 as well samples which been substitutionally doped with isoelectronic Ta and charged impurity Ti separate radiation damaged by 2.5 MeV protons. find that 5% doping supresses lower temperature charge density wave transition. In contrast, 0.1% larger residual resistivities then retain CDW transitions. A discussion is given difference between damage.
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