Electric field control of spin transport

摘要: Spintronics aims to develop electronic devices whose resistance is controlled by the spin of charge carriers that flow through them1,2,3. This approach illustrated operation most basic spintronic device, valve4,5,6, which can be formed if two ferromagnetic electrodes are separated a thin tunnelling barrier. In cases, its greater when magnetized in opposite directions than they same direction7,8. The relative difference resistance, so-called magnetoresistance, then positive. However, transport inside device spin- or energy-dependent3, occur and magnetoresistance negative9. next step construct an analogous field-effect transistor using this effect control with voltage applied gate10,11. practice though, implementing such has proved difficult. Here, we report on pronounced gate-field-controlled response carbon nanotubes connected leads. Both magnitude sign resulting tuned predictable manner. opens important route realization multifunctional spintronic devices.