作者: H Rotella , O Copie , A Pautrat , P Boullay , A David
DOI: 10.1088/0953-8984/27/9/095603
关键词: Thin film 、 Substrate (electronics) 、 Condensed matter physics 、 Electrical resistivity and conductivity 、 Heterojunction 、 Diffusion 、 Absorption (electromagnetic radiation) 、 Materials science 、 Pulsed laser deposition 、 Hall effect
摘要: A series of 100 nm LaVO3 thin films have been synthesized on (001)-oriented SrTiO3 substrates using the pulsed laser deposition technique, and effects growth temperature are analyzed. Transport properties reveal a large electronic mobility non-linear Hall effect at low temperature. In addition, cross-over from semiconducting state high-temperature to metallic low-temperature is observed, with clear enhancement character as increases. Optical absorption measurements combined two-bands analysis show that metallicity induced by diffusion oxygen vacancies in substrate. These results allow understand film/substrate heterostructure behaves an original semiconducting-metallic parallel resistor, transport consistently explained.