Elucidating the origins of the two-dimensional electron gas in LaVO 3 / SrTiO 3 interfaces
作者： L. Hu , R. H. Wei , X. W. Tang , S. J. Zhu , X. K. Zhang
DOI: 10.1063/1.5085352
关键词:
摘要: The influence of growth rate and substrate temperature on the two-dimensional electron gas (2DEG) LaVO 3 / SrTiO interfaces has been investigated. It is found that both can modulate structural electrical properties through oxygen substrate-to-film transfer. When thin films are deposited at a low high rate, exhibit weak transfer resultant density vacancies in substrate. As result, intrinsic effect (polar discontinuity and/or dielectric screening) dominates interfacial conduction, while play minor role. In contrast, (oxygen substrate) be enhanced (increased) by depositing lower rates higher temperatures. this case, contribution to conduction would prevail over effect. Our results elucidate origins 2DEG may also important for other 3-based heterointerfaces.The ...
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