CMOS voltage references using lateral bipolar transistors
作者： M.G.R. Degrauwe , O.N. Leuthold , E.A. Vittoz , H.J. Oguey , A. Descombes
DOI: 10.1109/JSSC.1985.1052453
关键词: CMOS 、 Materials science 、 Output impedance 、 Threshold voltage 、 Electrical engineering 、 Integrated circuit 、 Power supply rejection ratio 、 Amplifier 、 Bipolar junction transistor 、 Electronic circuit
摘要: Two bandgap references are presented which make use of CMOS compatible lateral bipolar transistors. The circuits designed to be insensitive the low beta and alpha current gains these devices. Their accuracy is not degraded by any amplifier offset. first reference has an intrinsic output impedance. Experimental results yield voltage constant within 2 mV, over commercial temperature range (0 70/spl deg/C), when all same batch trimmed at a single temperature. load regulation 3.5 /spl mu/V//spl mu/A, power supply rejection ratio (PSRR) 100 Hz 60 dB. Measurements on second PSRR minimum 77 dB Hz. Temperature behaviour identical circuit presented. This requires only 1.7 V.
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