Thin reduced graphene oxide interlayer with a conjugated block copolymer for high performance non-volatile ferroelectric polymer memory
作者： Dhinesh Babu Velusamy , Richard Hahnkee Kim , Kazuto Takaishi , Tsuyoshi Muto , Daisuke Hashizume
DOI: 10.1016/J.ORGEL.2014.07.035
关键词: Optoelectronics 、 AND gate 、 Ferroelectricity 、 Graphene 、 Insulator (electricity) 、 Electrode 、 Ferroelectric capacitor 、 Materials science 、 Field-effect transistor 、 Electrical conductor
摘要: Abstract Polymer ferroelectric-gate field effect transistors (Fe-FETs) employing ferroelectric polymer thin films as gate insulators are highly attractive a next-generation non-volatile memory. For minimizing leakage current of device which arises from electrically defective layer in particular at low operation voltage, the materials design interlayers between insulator and electrode is essential. Here, we introduce new solution-processed interlayer conductive reduced graphene oxides (rGOs) modified with conjugated block copolymer, poly(styrene- -paraphenylene) (PS- b -PPP). A FeFET p-type oligomeric semiconducting channel poly(vinylidene fluoride-co-trifluoroethylene) (PVDF-TrFE) exhibited characteristic source–drain hysteresis arising polarization switching PVDF-TrFE insulator. Our PS- -PPP rGOs (PMrGOs) moieties embedded insulating matrix not only significantly but also efficiently lowered voltage device. In consequence, showed large memory window high ON/OFF ratio excellent data retention read/write cycle endurance. Furthermore, our PMrGOs were successfully employed to FeFETs fabricated on mechanically flexible substrates promising performance under repetitive bending deformation.
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sci-hub.se 参考文章(46)
Haisheng Xu, Xuerang Fang, Xiaobing Liu, Shan Wu, Yingjun Gu, Xiangjian Meng, Jinglan Sun, Junhao Chu, Fabrication and Properties of Solution Processed All Polymer Thin-Film Ferroelectric Device Journal of Applied Polymer Science. ,vol. 120, pp. 1510- 1513 ,(2011) , 10.1002/APP.33291
Q. M. Zhang, Haisheng Xu, Fei Fang, Z.-Y. Cheng, Feng Xia, H. You, Critical thickness of crystallization and discontinuous change in ferroelectric behavior with thickness in ferroelectric polymer thin films Journal of Applied Physics. ,vol. 89, pp. 2613- 2616 ,(2001) , 10.1063/1.1344585
Haisheng Xu, Guobing Li, Yanni Zhang, Xiuli Zhang, Yingjun Gu, Dong Shen, XiangJian Meng, The preparation and ferroelectric properties of defect-free ultrathin films of vinylidene fluoride oligomer Journal of Applied Physics. ,vol. 107, pp. 034101- ,(2010) , 10.1063/1.3298463
K. N. Narayanan Unni, Remi de Bettignies, Sylvie Dabos-Seignon, Jean-Michel Nunzi, A nonvolatile memory element based on an organic field-effect transistor Applied Physics Letters. ,vol. 85, pp. 1823- 1825 ,(2004) , 10.1063/1.1788887
Gwang-Geun Lee, Eisuke Tokumitsu, Sung-Min Yoon, Yoshihisa Fujisaki, Joo-Won Yoon, Hiroshi Ishiwara, The flexible non-volatile memory devices using oxide semiconductors and ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene) Applied Physics Letters. ,vol. 99, pp. 012901- ,(2011) , 10.1063/1.3608145
Wangyang Fu, Zhi Xu, Xuedong Bai, Changzhi Gu, Enge Wang, Intrinsic memory function of carbon nanotube-based ferroelectric field-effect transistor. Nano Letters. ,vol. 9, pp. 921- 925 ,(2009) , 10.1021/NL801656W
J. C. Ribierre, S. Watanabe, M. Matsumoto, T. Muto, T. Aoyama, Majority carrier type conversion in solution-processed organic transistors and flexible complementary logic circuits Applied Physics Letters. ,vol. 96, pp. 083303- ,(2010) , 10.1063/1.3310025
Hee Joon Jung, Jiyoun Chang, Youn Jung Park, Seok Ju Kang, Bernard Lotz, June Huh, Cheolmin Park, Shear-Induced Ordering of Ferroelectric Crystals in Spin-Coated Thin Poly(vinylidene fluoride-co-trifluoroethylene) Films Macromolecules. ,vol. 42, pp. 4148- 4154 ,(2009) , 10.1021/MA900422N
Soon-Won Jung, Chun-Won Byun, Sang-Hee Ko Park, Chi-Sun Hwang, Gwang-Geun Lee, Eisuke Tokumitsu, Hiroshi Ishiwara, Sung-Min Yoon, Shin-Hyuk Yang, Impact of interface controlling layer of Al2O3 for improving the retention behaviors of In-Ga-Zn oxide-based ferroelectric memory transistor Applied Physics Letters. ,vol. 96, pp. 232903- ,(2010) , 10.1063/1.3452339
Seok Ju Kang, Insung Bae, Yu Jin Shin, Youn Jung Park, June Huh, Sang-Min Park, Ho-Cheol Kim, Cheolmin Park, Nonvolatile polymer memory with nanoconfinement of ferroelectric crystals. Nano Letters. ,vol. 11, pp. 138- 144 ,(2011) , 10.1021/NL103094E