Fabrication of Nanoimprint Stamp Using Interference Lithography

摘要: Interference lithography is used to fabricate a nanoimprint stamp, which key step for lithography. A layer of chromium in thickness about 20 nm deposited on the newly cleaned fused silica substrate by thermal evaporation, and positive resist 150 spun layer. Some patterns, including lines, holes pillars, are observed photoresist Elm exposing interference patterns they then transferred wet etching. Fused stamps fabricated reactive ion etching with CHF3/O-2 as etchants using etch mask. An atomic force microscope analyse pattern transfer each step. The results show that regular hole silica, average full width 143 at half maximum (FWHM), depth 76 spacing 450 nm, have been fabricated. exposure method fast, inexpensive applicable fabrication large areas.