Efficient Luminescence and Energy Transfer in Erbium Silicate Thin Films

摘要: Currently, electrical interconnections based on metal lines represent the most important limitation performances of silicon-based microelectronic devices. The parasitic capacities generated at metal/insulator/metal capacitors present in complex multilevel metallization schemes actually used, intrinsic resistivity lines, and contact resistance metal/metal interfaces constitute main contributions to delay signal propagation. Recently, a reduction times was achieved by replacing traditional Al SiO2 with new materials, such as copper-based alloys low-dielectricconstant insulating layers, but soon minimum feature size devices will be further reduced, resulting from again an unacceptable bottleneck for device performances. A definitive solution this problem could use optical transfer information inside chip or chip-to-chip communications. To develop strategy, siliconcompatible materials able generate, guide, amplify, switch, modulate, detect light are needed. Recent major breakthroughs field have been observation gain Si nanocrystals, development Raman laser, realization high-speed electro-optic modulator, electroluminescence ultrapure diodes nanocrystal field-effect transistors. primary requirement proposed above applications is compatibility current technology. However, because intrinsically unable efficiently emit light, owing its indirect bandgap, it evident that approach described lack efficient source. Among efforts scientific community produce photons silicon, introduction light-emitting impurities, erbium ions, has leading role. relevant advantage standard silicon technology can used introduce dopant process material. Furthermore, Er ions 1.54 lm, which strategic wavelength telecommunication corresponds loss spectrum silica fibers. Incorporation crystalline (c-Si) emerged first promising method turn into luminescent material, doping concentration limited (ca. 1 × 10 cm) low solid solubility Er. co-implantation O allowed limit segregation precipitation, formation Er-O complexes. room temperature relatively luminescence efficiency obtained result strong nonradiative processes competing radiative de-excitation c-Si. More recently, shown using matrix containing Er-doped nanoclusters, intense room-temperature obtained. Indeed, demonstrated nanoclusters presence act sensitizers rare earth effective excitation cross section, more than two orders magnitude higher compared resonant absorption photon. Optical waveguides also reported, lightemitting fabricated. system critically dependent content, confined carrier nanoclusters. Even if prevail over through careful balance concentrations, obtaining high values different approach, may allow overcome some limits above-described systems dopants, represented compounds, oxides silicates. In these compounds component, therefore (about several greater those typically ion implantation, allowing access huge amount emitting centers. Very few reports literature discuss properties Er2O3 [19–21] silicate. particular, case silicate available refer sysC M U N IC TI