作者: A. Kasuya , M. Suezawa
DOI: 10.1063/1.120119
关键词: Excitation 、 Erbium 、 Optoelectronics 、 Oxide 、 Materials science 、 Overlayer 、 Doping 、 Photoluminescence 、 Excited state 、 Thin film
摘要: A thin Er2O3 layer grown on a Si surface by vapor doping of Er exhibits intense photoluminescence in the green and red regions excited laser beams 800 nm 450–490 ranges. These light emissions take place via resonant two or one step photoexcitations 4f levels Er3+ ions. Our sample fabrication procedure is integrated circuit compatible produces layers excellent homogeneity quality as demonstrated optical measurements.