Process for forming a combination hardmask and antireflective layer

作者: Stanley M. Filipiak , Kevin D. Lucas , Yeong Jyh Lii , Christopher D. Pettinato , Wayne D. Clark

DOI:

关键词: ResistMaterials scienceOpticsAnti-reflective coatingLayer (electronics)Composite materialConductive materials

摘要: A hardmask layer ( 34 ) is formed over insulating layers 26, 24, 22 and 20 ), an antireflective 36 overlying the ). resist 38 opening in to expose a surface portion of The exposed portions are etched feature 61 conductive material 74 deposited fill lying outside removed.

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