Dielectric anti-reflection coating application in a 0.175 /spl mu/m dual-damascene process
作者： GY Lee , ZG Lu , DM Dobuzinsky , XJ Ning , G Costrini
关键词: Dielectric 、 Copper interconnect 、 Lithography 、 Layer (electronics) 、 Photolithography 、 Critical dimension 、 Coating 、 Optics 、 Resist 、 Materials science
摘要: Various dielectric anti-reflection coatings (DARCs) were evaluated using 0.175 /spl mu/m dual-damascene structures to examine the lithography process window and integration capability. Double-DARC layers have been developed with optimum refractive indices thickness, based on reflectance simulations measurements, provide better critical dimension (CD) control as compared organic ARC single-DARC layer applications. The scheme a double-DARC provides substantial benefit for metallization.
sci-hub.se 参考文章(1)
R.F. Schnabel, D. Dobuzinsky, J. Gambino, K.P. Muller, F. Wang, D.C. Perng, H. Palm, Dry etch challenges of 0.25 /spl mu/m dual damascene structures Microelectronic Engineering. ,vol. 37, pp. 59- 65 ,(1997) , 10.1016/S0167-9317(97)00094-4