Reactions of Silicon Carbide and Silicon(IV) Oxide at Elevated Temperatures
作者： Nathan S. Jacobson , Kang N. Lee , Dennis S. Fox
DOI: 10.1111/J.1151-2916.1992.TB04232.X
关键词: Carbon monoxide 、 Analytical chemistry 、 Carbon 、 Oxide 、 Silicon carbide 、 Chemistry 、 Reaction rate constant 、 Stoichiometry 、 Chemical reaction 、 Silicon 、 Nuclear chemistry 、 Materials Chemistry 、 Ceramics and Composites
摘要: The reaction between SiC and SiO 2 has been studied in the temperature range 1400–1600 K. A Knudsen cell in conjunction with a vacuum microbalance and a high‐temperature …
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