Modified nitride spacer for solving charge retention issue in floating gate memory cell
作者： Chuan-Li Chang , Di-Son Kuo , Chang Song Lin , Ming-Chou Ho , Hsin-Ming Chen
DOI:
关键词: Optoelectronics 、 Memory cell 、 Materials science 、 Nitride 、 Electrode 、 Layer (electronics) 、 Electronic engineering 、 Gate oxide 、 Oxide 、 Charge retention
摘要: A modified nitride spacer and making of the same are disclosed. The is formed adjacent a high-temperature oxide (HTO) layer which in turn sidewalls gate electrode. It shown that placement an intervening between electrode spacer, order only, provides significant improvement charge retention floating memory cells. Also, forming from pure, undoped only yields favorable results.
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