Static random access memory cell having a thin film transistor (TFT) pass gate connection to a bit line
作者： Keith E. Witek , Kent J. Cooper , Clinton C. K. Kuo , Bruce L. Morton , Ko-Min Chang
DOI:
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摘要: A memory circuit and method of formation uses a transmission gate (24) as select gate. The contains transistor (30) which is an N-channel (28) P-channel transistor. transistors (28 30) are electrically connected in parallel. use the allows reads writes to occur cell storage device (i.e. capacitor (32), floating (22), etc.) without significant voltage drop occurring across In addition, EEPROM technology more compatible with EPROM/flash when using within devices.
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