The formation of heterointerface defects in Au/Cu films on Si substrates under direct current in a vacuum ultraviolet environment
作者： Kai Yan , Wenqing Yao , Liping Yang , Jiangli Cao , Yuanyuan Zhao
DOI: 10.1039/C5CP06499F
关键词: Surface layer 、 Metal 、 Layer (electronics) 、 Intermetallic 、 Sputter deposition 、 Auger electron spectroscopy 、 Direct current 、 Nanotechnology 、 Chemistry 、 Analytical chemistry 、 High-resolution transmission electron microscopy
摘要: Au/Cu metallic films were deposited on p-Si(100) substrates with and without an Au upper layer by magnetron sputtering. The defect formation nanoscale interfacial evolution at the Cu/Si interfaces studied using Auger electron spectroscopy (AES) high resolution transmission microscopy (HRTEM). results showed that increase in defects heterointerfaces surface was induced effect of a direct current (DC) vacuum ultraviolet (UV) environment, which could provide more channels for removal atoms. directed migration atomic clusters caused DC, also aggravated defects' expansion led to Au-Cu intermetallic compounds (IMCs). In addition, voids formed interface between Si found be mainly related generation material Au2Cu3.
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