Integrated circuit memory device having interleaved read and program capabilities and methods of operating same

作者: Cheng-Chung Tsao , Tien-Ler Lin

DOI:

关键词: RowComputer hardwareElectronic circuitWord (computer architecture)Integrated circuitSemiconductor memoryParallel computingPage buffersColumn (typography)Computer scienceBit line

摘要: A nonvolatile semiconductor memory includes a plurality of cells arranged in columns and rows, word lines, bit output buffers, page buffers grouped sub-pages. Each buffer is connected to corresponding lines through first column decoder circuit one second circuit. This construction allows the peripheral control circuits clock out data stored sub-page into while latching line sub-page. Therefore, this architecture able perform read update different sub-pages simultaneously. Two sets address registers are used store starting end for programming. During programming, only located between will be programmed successively. programming technique greatly reduces disturbance time.