Mechanism for secondary electron dopant contrast in the SEM

摘要: The growing use of secondary electron imaging in the scanning microscope (SEM) to map dopant distributions has stimulated an increasing interest mechanism that gives rise so-called contrast. In this paper a range experimental results are used demonstrate wide applicability technique. These then incorporated into model where, particular, effect surface barrier and vacuum level considered. It is found dominant contribution contrast due three-dimensional variation outside semiconductor.