A quantitative model for doping contrast in the scanning electron microscope using calculated potential distributions and Monte Carlo simulations

摘要: This paper describes the use of a Monte Carlo model incorporating finite-element method computing electrostatic fields inside and outside semiconductor, plus ray-tracing algorithm for determining doping contrast observed in scanning electron microscope (SEM). combined numerical also enables effects on surface band-bending to be distinguished from those external patch specimen, as well any applied macroscopic detection system SEM. Good agreement our new theory with experiment is obtained. The characteristics energy-filtered secondary images are explained. results this work lead more advanced understanding mechanisms, thereby enabling quantitative dopant profiling using