Strain mapping at nanometer resolution using advanced nano-beam electron diffraction
作者： V. B. Ozdol , C. Gammer , X. G. Jin , P. Ercius , C. Ophus
DOI: 10.1063/1.4922994
关键词: Diffraction 、 Orientation (computer vision) 、 Resolution (electron density) 、 Transmission electron microscopy 、 Electron 、 Materials science 、 Detector 、 Optics 、 Scanning transmission electron microscopy 、 Electron diffraction
摘要: We report on the development of a nanometer scale strain mapping technique by means scanning nano-beam electron diffraction. Only recently possible due to fast acquisition with direct detector, this allows for high precision 0.1% at lateral resolution 1 nm large field view reaching up 1 μm. demonstrate its application technologically relevant strain-engineered GaAs/GaAsP hetero-structure and show that method can even be applied highly defected regions substantial changes in local crystal orientation. Strain maps derived from atomically resolved transmission microscopy images were used validate accuracy, versatile technique.
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