Strain mapping for the silicon-on-insulator generation of semiconductor devices by high-angle annular dark field scanning electron transmission microscopy
作者： David Cooper , Cyrille Le Royer , Armand Béché , Jean-Luc Rouvière
DOI: 10.1063/1.4723572
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摘要: The strain in pMOS p-type metal-oxide-semiconductor devices grown on silicon-on-insulator substrates has been measured by using the geometrical phase analysis of high angle annular dark field scanning electron microscopy. We show that latest generations microscopes, can now be quantitatively with a large view, spatial resolution as low 1 nm sensitivity good 0.15%. This technique is extremely flexible, provides both structural and information, applied to all types nanoscale materials quickly easily.
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