Ultrathin (5 nm) SiGe-On-Insulator with high compressive strain (−2 GPa): From fabrication (Ge enrichment process) to in-depth characterizations
作者： F. Glowacki , C. Le Royer , Y. Morand , J.-M. Pédini , T. Denneulin
DOI: 10.1016/J.SSE.2014.04.026
关键词:
摘要: Abstract 300 mm ultrathin Silicon-On-Insulator (SOI) wafers with SiGe/Si stacks on top were used as pre-structures for the fabrication of 5 nm thick SiGe-On-Insulator (SGOI) substrates obtained by Ge enrichment technique. Those will be channel advanced Fully Depleted (FD) p-type Metal Oxide Semiconductor Field Effect Transistors (pMOSFET). We present in first part successful SGOI wafers. Various characterization techniques are to investigate profile and final strain fabricated Si 0.7 0.3 film. Secondary Ions Mass Spectrometry (SIMS) Scanning Transmission Electron Microscopy (STEM) clearly show that content is very homogeneous ( x = 30 ± 1%) SiGe layer. Raman spectroscopy High Angle Annular Dark (HAADF) STEM both confirm film compressively strained (−2 GPa). The second dedicated sensitivity process (based numerical modelling). impact single combined fluctuations pre-structure parameters T , SiGe,0 Ge,0 ) layer ).
harvard.edu
sci-hub.se 参考文章(7)
David Cooper, Cyrille Le Royer, Armand Béché, Jean-Luc Rouvière, Strain mapping for the silicon-on-insulator generation of semiconductor devices by high-angle annular dark field scanning electron transmission microscopy Applied Physics Letters. ,vol. 100, pp. 233121- ,(2012) , 10.1063/1.4723572
K. Cheng, A. Khakifirooz, N. Loubet, S. Luning, T. Nagumo, M. Vinet, Q. Liu, A. Reznicek, T. Adam, S. Naczas, P. Hashemi, J. Kuss, J. Li, H. He, L. Edge, J. Gimbert, P. Khare, Y. Zhu, Z. Zhu, A. Madan, N. Klymko, S. Holmes, T. M. Levin, A. Hubbard, R. Johnson, M. Terrizzi, S. Teehan, A. Upham, G. Pfeiffer, T. Wu, A. Inada, F. Allibert, B.-Y. Nguyen, L. Grenouillet, Y. Le Tiec, R. Wacquez, W. Kleemeier, R. Sampson, R. H. Dennard, T. H. Ning, M. Khare, G. Shahidi, B. Doris, High performance extremely thin SOI (ETSOI) hybrid CMOS with Si channel NFET and strained SiGe channel PFET international electron devices meeting. ,(2012) , 10.1109/IEDM.2012.6479063
B Vincent, J-F Damlencourt, P Rivallin, E Nolot, C Licitra, Y Morand, L Clavelier, Fabrication of SiGe-on-insulator substrates by a condensation technique: an experimental and modelling study Semiconductor Science and Technology. ,vol. 22, pp. 237- 244 ,(2007) , 10.1088/0268-1242/22/3/011
M. Mermoux, A. Crisci, F. Baillet, V. Destefanis, D. Rouchon, A. M. Papon, J. M. Hartmann, Strain in epitaxial Si/SiGe graded buffer structures grown on Si(100), Si(110), and Si(111) optically evaluated by polarized Raman spectroscopy and imaging Journal of Applied Physics. ,vol. 107, pp. 013512- ,(2010) , 10.1063/1.3272824
Tsutomu Tezuka, Norio Hirashita, Yoshihiko Moriyama, Shu Nakaharai, Naoharu Sugiyama, Shin-ichi Takagi, Strain analysis in ultrathin SiGe-on-insulator layers formed from strained Si-on-insulator substrates by Ge-condensation process Applied Physics Letters. ,vol. 90, pp. 181918- ,(2007) , 10.1063/1.2735672
L. Hutin, M. Casse, C. Le Royer, J.-F. Damlencourt, A. Pouydebasque, C. Xu, C. Tabone, J.-M. Hartmann, V. Carron, H. Grampeix, V. Mazzocchi, R. Truche, O. Weber, P. Batude, X. Garros, L. Clavelier, M. Vinet, O. Faynot, 20nm gate length trigate pFETs on strained SGOI for high performance CMOS symposium on vlsi technology. pp. 37- 38 ,(2010) , 10.1109/VLSIT.2010.5556130
A. Khakifirooz, K. Cheng, T. Nagumo, N. Loubet, T. Adam, A. Reznicek, J. Kuss, D. Shahrjerdi, R. Sreenivasan, S. Ponoth, H. He, P. Kulkarni, Q. Liu, P. Hashemi, P. Khare, S. Luning, S. Mehta, J. Gimbert, Y. Zhu, Z. Zhu, J. Li, A. Madan, T. Levin, F. Monsieur, T. Yamamoto, S. Naczas, S. Schmitz, S. Holmes, C. Aulnette, N. Daval, W. Schwarzenbach, B.-Y. Nguyen, V. Paruchuri, M. Khare, G. Shahidi, B. Doris, Strain engineered extremely thin SOI (ETSOI) for high-performance CMOS symposium on vlsi technology. pp. 117- 118 ,(2012) , 10.1109/VLSIT.2012.6242489