Detecting Unintended Schottky Junctions and Their Impact on Tunnel FET Characteristics
作者： Louis Hutin , Cyrille Le Royer , Robert Pierce Oeflein , Sebastien Martinie , Julien Borrel
关键词: Ambipolar diffusion 、 Field-effect transistor 、 Schottky barrier 、 Quantum tunnelling 、 Schottky diode 、 Silicon on insulator 、 Electrical engineering 、 Optoelectronics 、 Metal–semiconductor junction 、 Leakage (electronics)
摘要: We demonstrate in this paper a fast and simple method for evidencing classifying the ambipolar response of tunneling-based field effect transistors pull-down (nFET-like) pull-up (pFET-like) modes. This technique enables to unequivocally determine whether carrier injection on either side device occurs via band-to-band-tunneling or single tunneling through Schottky barrier. It was applied Silicon On Insulator (SOI) SiGeOI tunnel FETs, which were fabricated be nominally identical, yet showed discrepancy several orders magnitude ON-state current. The electrostatic analysis their respective signature revealed that high-drive-current devices fact operating like barrier FETs mode due silicidation defect occurring only n-doped side. These new findings bring about reassessment previously published results terms current—-subthreshold swing tradeoff perspectives nanowire SiGe pTFETs. other hand, resulting unintended asymmetrical geometry suggests possible route fabricating with reduced parasitic leakage.
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